| PART |
Description |
Maker |
| M58CR064-ZBT M58CR064Q90ZB6T M58CR064CZB M58CR064D |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的16，双行，突发1.8V电源快闪记忆
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动3V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双1616分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics
意法半导
STMicroelectronics N.V.
ST Microelectronics
|
| M27C320 6185 M27C320-80N1 M27C320-100M1 M27C320-10 |
From old datasheet system
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32兆位4Mb的x8或检察官办公室的2Mb x16存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M29F032D M29F032D70 7946 M29F032D70N1 M29F032D70N1 |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 / Uniform Block 5V Supply Flash Memory
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 Uniform Block 5V Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M59P064100M1T M59P064110N1T M59P064110M1T M59P0641 |
64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory
|
ST Microelectronics
|
| M29W640GT70NB6E M29W640GH60ZA6E M29W640GH60ZF6F M2 |
64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
|
Numonyx B.V
|
| M29KW064E M29KW064E110ZA1T |
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlashMemory 64兆位4Mb的x16插槽，统一V电源LightFlash⑩记
|
意法半导
STMicroelectronics N.V.
|
| M58LW064D110ZA6T M58LW064D M58LW064D110N1T M58LW06 |
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
